The Study Of Inverted Organic Solar Cells With Blocking Layers

碩士 === 義守大學 === 電子工程學系 === 101 === In this study, inverted organic solar cells (IOSCs) have been fabricated and characterized. Device’s structure consists of the blend of poly(3-hexythiophene)(P3HT) and [6,6]-phenyl C61-butyric acid methyl ester(PCBM) as an active layer and a solution processed- wid...

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Bibliographic Details
Main Authors: Hui-Hsuan Lee, 李慧萱
Other Authors: Meiso Yokoyama
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/97149945737939834777
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Summary:碩士 === 義守大學 === 電子工程學系 === 101 === In this study, inverted organic solar cells (IOSCs) have been fabricated and characterized. Device’s structure consists of the blend of poly(3-hexythiophene)(P3HT) and [6,6]-phenyl C61-butyric acid methyl ester(PCBM) as an active layer and a solution processed- wide band gap material as blocking layers. The blocking layer possesses high charge mobility and wide band gap. Wide band gap can effectively suppress the diffusion of electron and hole separating from exciton to the electrodes, reducing the combined effect. Experimental results reveal that Al-doped zinc-oxide (AZO) annealed in high temperature to procure nano-particle can effectively enhance electrons to transport from active layer to the cathode. AZO is applied in the IOSCs as a hole blocking layer (HBL) to improve the device efficiency. Moreover, nickel-oxide (NiO) is adopted as the electron blocking layer (EBL) to discuss the dependence of energy band diagram and overall surface morphology on the characteristics of IOSCs. We found an IOSC with the NiO EBL has a power conversion efficiency (PCE) as high as 2.12%. Because NiO has lower lowest unoccupied molecular orbital (LUMO) and higher highest occupied molecular orbital (HOMO), and the NiO can improve the energy barrier between the active layer and the electrode. An IOSC under the optimized structure of ITO/AZO/P3HT:PCBM/NiO/Ag exhibits open circuit voltage (Voc) of 0.539 V, short circuit current density (Jsc) of 9.26 mA/cm2, fill factor (F.F.) of 42.38% and PCE of 2.12% at AM 1.5G of 100 mW/cm2.