| Summary: | 碩士 === 義守大學 === 材料科學與工程學系 === 101 === In this study, using high-temperature oxidation, the copper powder and nano copper, changing the atmosphere and the reaction temperature to prepare cuprous oxide powder, and observe the particle size and purity. By reactive RF magnetron sputtering on glass, sapphire substrate (0001) and MgO (100) cuprous oxide thin films deposited on the effects of different parameters on the crystal structure of cuprous oxide thin films, surface morphology, optical properties, and electrical properties of experimental parameters to change the target, changing the atmosphere, changing the substrate temperature.
The experimental results show that the nano copper powders reaction temperature of 600℃ and the atmosphere of oxygen, the particle size of Cu2O powder is 300nm. Use copper target sputtered Cu2O thin film, the substrate is at the room temperature, about 50% of visible light transmittance and energy gap of about 2.2eV, resistivity is 5(Ω-cm), and the substrate temperature was 500℃, the visible light transmittance of about 80%, which energy gap of about 2.4eV, resistivity 32(Ω-cm). Use CuO target sputtered Cu2O thin film, the substrate is at room temperature the visible light transmittance of approximately 60% and the energy gap of about 2.35eV. The substrate temperature was 500, the visible light transmittance of 85%, the energy gap of about 2.65eV.
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