| Summary: | 碩士 === 大葉大學 === 電機工程學系 === 101 === In this study, aluminum-doped zinc oxide (Al-doped ZnO) nanorods which were prepared with doping aluminum nitrate (Al(NO3)3‧9H2O) by solution growth method on p-type silicon substrate were fully characterized. First, ethyl alcohol (C2H5OH) was added to zinc acetate (Zn(CH3COO)2‧2H2O) to form a 0.0075M mixed solution. This mixed solution was then used to form a seeding layer on silicon substrate by spin coating. Subsequently, mixed solutions using 0.02M hexamethylenetetramine (C6H12N4), 0.02M zinc nitrate hexahydrate (Zn(NO3)2‧6H2O), and aluminum nitrate (Al(NO3)3‧9H2O) of various concentrations were prepared. And the growth was carried out in the mixed solution at 90˚C for two hours. As observed from field-emission scanning electron microscope (FE-SEM), the synthesized ZnO are hexagonal nanorods indeed. The chemical components of Al-doped ZnO nanorods were determined from energy diffraction spectroscopy (EDS) and are zinc, oxygen, and aluminum. The conductivity type for Al-doped ZnO nanorods is n-type indeed as was determined from Hall effect measurement, and the conductivity has been increased substantially by aluminum nitrate concentration; while mobility for majority carrier decreases with aluminum nitrate. As expected, the Al-doped ZnO nanorods prepared by aluminum nitrate of different concentrations also exhibit different I-V characteristics. In addition, the photoluminescence (PL) characteristic peak is in the range between 376.1nm and 379.4nm for Al-doped ZnO nanorods. Lastly, Al-doped ZnOnanorods were fabricated on a p-type silicon substrate to form a n-ZnO/p-Si heterojunction. This n-ZnO/p-Si heterojunction exhibits rectifying characteristics and its parameters such as reverse saturation current and ideality factor have been successfully determined.
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