Study of the characterization and Zn-doping of Cu2O film

• Main Authors: Ting-Chu Yeh, 葉庭竹
• Other Authors: Hui-Ling Kao
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/03238583851117369454

碩士 === 中原大學 === 電子工程研究所 === 101 === In this study, the cuprous oxide films were prepared by thermal oxidation of copper planes with water vapor. According to the XRD results, Cu2O thin films were grown with preferred (111) orientation and the (111) peak intensity increased with the temperature and water vapor pressure. In addition, the measured PL spectra of Cu2O films showed the broad peaks of 718nm, 810nm and 907nm, corresponding to the luminescence of excitons trapped at double ionized oxygen vacancies, single ionized oxygen vacancies and copper vacancies. In addition, the Zn doped Cu2O films were deposited by chemical bath deposition. According to the XRD results, Cu2O still kept the texture of prominent (111) plane in spite of various concentration, and none of other crystalline phases or directions was present. Furthermore, a large amount of grains with size of about 0.8~2m were found, which is about 2 to 20 times larger than those in reported literatures. Low temperature PL measurement showed a significant result of a broad peak from 636(1.94eV) to 645(1.92eV), which was observed with Zn doping, and the peak intensity increased with Zn amount. The hot probe measurement demonstrated that Zn-doped Cu2O films are n-type semiconductors, a donor level at 0.23eV from the bottom of the conduction band.