| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 101 === In this study, the cuprous oxide films were prepared by thermal oxidation of
copper planes with water vapor. According to the XRD results, Cu2O thin films
were grown with preferred (111) orientation and the (111) peak intensity
increased with the temperature and water vapor pressure. In addition, the
measured PL spectra of Cu2O films showed the broad peaks of 718nm, 810nm
and 907nm, corresponding to the luminescence of excitons trapped at double
ionized oxygen vacancies, single ionized oxygen vacancies and copper
vacancies.
In addition, the Zn doped Cu2O films were deposited by chemical bath
deposition. According to the XRD results, Cu2O still kept the texture of
prominent (111) plane in spite of various concentration, and none of other
crystalline phases or directions was present. Furthermore, a large amount of
grains with size of about 0.8~2m were found, which is about 2 to 20 times
larger than those in reported literatures.
Low temperature PL measurement showed a significant result of a broad
peak from 636(1.94eV) to 645(1.92eV), which was observed with Zn doping,
and the peak intensity increased with Zn amount. The hot probe measurement
demonstrated that Zn-doped Cu2O films are n-type semiconductors, a donor
level at 0.23eV from the bottom of the conduction band.
|
|---|
