Study on the doping properties of wide band-gap oxide semiconductor films
碩士 === 中原大學 === 電子工程研究所 === 101 === Ag-doped ZnO (ZnO:Ag) thin film have been fabricated by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD). Diethylizinc (DEZn) and water vapor were used as the precursors of Zn and O, respectively, and Ag was as p-type doping source. The p-ty...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7352v9 |