Study on Piezoresistive Properties and Low Frequency Noise Characteristics of Silicon Nanowire Transistors

• Main Authors: Tie-Chou Liang, 梁鐵籌
• Other Authors: Ting-Kuo Kang
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/52159427403587199331

碩士 === 正修科技大學 === 電子工程研究所 === 101 === Study on Piezoresistive Properties and Low Frequency Noise Characteristics of Silicon Nanowire Transistors Student: Tie-Chou Liang Advisor: Ting-Kuo Kang Department of Electronic Engineering Cheng Shiu University Kaohsiung County, Taiwan, Republic of China Abstract In this thesis is to study the piezoresistive properties of silicon nanowire transistors and its low frequency noise characteristics . Firstly, we discuss the piezoresistive properties of SiNWFETs through a simple four-point bending technique (4PB). The 4PB can apply an external uniaxial mechanical stress on SiNWFETs. The magnitude of mechanical stress can be directly measured by a foil strain gauge mounted on the surface of SiNWFETs. The piezoresistive coefficient(π) of 39×10-11 Pa-1 and gauge factor(GF) of 65 for SiNWFETs can be obtained. The π and GF appear to be consistent with the piezoresistive properties of SiNWFETs. The second part is to explore the low frequency noise characteristics of SiNWFETs. Based we extracted into the strain gauge values and the noise amplitude (A), thereby obtaining the SNR value of the noise analysis. And then we observed relationship between SiNW’s resistance changes and Low-frequency noise magnitude when we applied stress to the SiNWFETs. Finally we understand the physical mechanism of Low-frequency noise in SiNWFETs can be changed when the stress is applied to SiNWFETs.