| Summary: | 碩士 === 中華科技大學 === 機電光工程研究所在職專班 === 101 === The thermoelectric material is a material which can interchange electricity with thermal energy. Bi2Te3 is a thermoelectric material frequently used in commercial products. In order to improve the efficiency, a P-type or N-type semiconductor is usually made by doping different trace elements. A good thermoelectric material requires high fever electricity, good electrical conductivity and low thermal conductivity. The thermoelectric properties are mainly presented by the performance index of merit, ZT (ZT = α2σT / κ, where α is the Seebeck coefficient, σ is the conductivity, κ is the thermal conductivity, T is absolute temperature). Since 1950s, Bi2Te3 alloy has been the best thermoelectric material near room temperature, and it has been widely used in refrigeration and temperature control technology.
This paper uses Solid alloy to prepare the bismuth telluride (Bi2Te3) and the thermoelectric materials of p-type bismuth telluride (Bi2Te3) 0.2 (Sb2Te3) 0.8, measures its electrical conductivity, Seebeck coefficient and thermal conductivity, and then explains how the formula affects the thermoelectric properties from the microstructure point of view.
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