The numerical simulation of heating coil on silicon carbide single crystal growth by PVT method

碩士 === 中華科技大學 === 電子工程研究所碩士班 === 101 === Abstract We use the COMSOL Mutiphysics computer software simulation to study the reference parameters of the crystal growth of silicon carbide (SiC) by the physical vapor transport method (referred to as: PVT method). The conditions that affect the growth of...

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Bibliographic Details
Main Authors: Jhao-Jhang Ciou, 邱昭彰
Other Authors: Kuo-Liang Chen
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/36768149831001760479

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