The numerical simulation of heating coil on silicon carbide single crystal growth by PVT method
碩士 === 中華科技大學 === 電子工程研究所碩士班 === 101 === Abstract We use the COMSOL Mutiphysics computer software simulation to study the reference parameters of the crystal growth of silicon carbide (SiC) by the physical vapor transport method (referred to as: PVT method). The conditions that affect the growth of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36768149831001760479 |