The Investigation of GaN on Si Substrate E/D mode HEMTs with refractory metal design
碩士 === 長庚大學 === 電子工程學系 === 101 === As one of the wide bandgap semiconductors, gallium nitride (GaN) has been regarded to have potential to develop electron devices not only for high frequency and high power application, but also for high temperature application owing to its wide bandgap and low intr...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01630060242103098435 |