Characterization of novel flexible non-volatile memories with Sm2O3 and Lu2O3 dielectric films on PET substrate
碩士 === 長庚大學 === 電子工程學系 === 101 === Resistance random access memory (ReRAM) has the merits of simple structure, low operation voltage, high speed, low power consumption, high endurance, long retention and lower scalability. It acquires a lot of attention of many research groups who are working ha...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89565113482834274625 |