High Output Power S-band Differential VCO Design Using GaN HEMT Technology
碩士 === 長庚大學 === 電子工程學系 === 101 === This thesis contains two parts: The first part is the usage of 0.5-μm GaN HEMT process for the design work on the S-band 3.5 GHz differential VCO. Second part is using 0.5-μm process transistors with printed circuit board (FR4 PCB) to design of a single-ended se...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/49030760521194799900 |