High Output Power S-band Differential VCO Design Using GaN HEMT Technology

High Output Power S-band Differential VCO Design Using GaN HEMT Technology

碩士 === 長庚大學 === 電子工程學系 === 101 === This thesis contains two parts: The first part is the usage of 0.5-μm GaN HEMT process for the design work on the S-band 3.5 GHz differential VCO. Second part is using 0.5-μm process transistors with printed circuit board (FR4 PCB) to design of a single-ended se...

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Bibliographic Details
Main Authors: Kai Lun Hung, 洪楷倫
Other Authors: H.C.Chiu
Format: Others
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/49030760521194799900
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spelling ndltd-TW-101CGU054280292015-10-13T22:45:36Z http://ndltd.ncl.edu.tw/handle/49030760521194799900 High Output Power S-band Differential VCO Design Using GaN HEMT Technology 氮化鎵場效應電晶體在S頻段差動式壓控振盪器設計運用 Kai Lun Hung 洪楷倫 碩士 長庚大學 電子工程學系 101 This thesis contains two parts: The first part is the usage of 0.5-μm GaN HEMT process for the design work on the S-band 3.5 GHz differential VCO. Second part is using 0.5-μm process transistors with printed circuit board (FR4 PCB) to design of a single-ended series of negative impedance 2.4 GHz VCO. In the differential VCO section, we designed a 3.532 GHz VCO by cross-coupled structure. This 3.532 GHz VCO could be achieved the output power of 12.01 dBm, tuning range of 0.45 GHz, and the phase noise at 1 MHz offset can be obtained -121.19 dBc/Hz. In the single-ended VCO section, we designed a 2.445 GHz VCO by common gate structure. This 2.445 GHz VCO could be achieved the output power 20.01 dBm, tuning range of 19 MHz, and the phase noise at 1 MHz offset can be obtained -140.33 dBc/Hz. H.C.Chiu 邱顯欽 2013 學位論文 ; thesis 66
collection NDLTD
format Others
sources NDLTD
description 碩士 === 長庚大學 === 電子工程學系 === 101 === This thesis contains two parts: The first part is the usage of 0.5-μm GaN HEMT process for the design work on the S-band 3.5 GHz differential VCO. Second part is using 0.5-μm process transistors with printed circuit board (FR4 PCB) to design of a single-ended series of negative impedance 2.4 GHz VCO. In the differential VCO section, we designed a 3.532 GHz VCO by cross-coupled structure. This 3.532 GHz VCO could be achieved the output power of 12.01 dBm, tuning range of 0.45 GHz, and the phase noise at 1 MHz offset can be obtained -121.19 dBc/Hz. In the single-ended VCO section, we designed a 2.445 GHz VCO by common gate structure. This 2.445 GHz VCO could be achieved the output power 20.01 dBm, tuning range of 19 MHz, and the phase noise at 1 MHz offset can be obtained -140.33 dBc/Hz.
author2 H.C.Chiu
author_facet H.C.Chiu
Kai Lun Hung
洪楷倫
author Kai Lun Hung
洪楷倫
spellingShingle Kai Lun Hung
洪楷倫
High Output Power S-band Differential VCO Design Using GaN HEMT Technology
author_sort Kai Lun Hung
title High Output Power S-band Differential VCO Design Using GaN HEMT Technology
title_short High Output Power S-band Differential VCO Design Using GaN HEMT Technology
title_full High Output Power S-band Differential VCO Design Using GaN HEMT Technology
title_fullStr High Output Power S-band Differential VCO Design Using GaN HEMT Technology
title_full_unstemmed High Output Power S-band Differential VCO Design Using GaN HEMT Technology
title_sort high output power s-band differential vco design using gan hemt technology
publishDate 2013
url http://ndltd.ncl.edu.tw/handle/49030760521194799900
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