| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 101 === This thesis contains two parts: The first part is the usage of 0.5-μm GaN HEMT process for the design work on the S-band 3.5 GHz differential VCO. Second part is using 0.5-μm process transistors with printed circuit board (FR4 PCB) to design of a single-ended series of negative impedance 2.4 GHz VCO.
In the differential VCO section, we designed a 3.532 GHz VCO by cross-coupled structure.
This 3.532 GHz VCO could be achieved the output power of 12.01 dBm, tuning range of 0.45 GHz, and the phase noise at 1 MHz offset can be obtained -121.19 dBc/Hz.
In the single-ended VCO section, we designed a 2.445 GHz VCO by common gate structure.
This 2.445 GHz VCO could be achieved the output power 20.01 dBm, tuning range of 19 MHz, and the phase noise at 1 MHz offset can be obtained -140.33 dBc/Hz.
|
|---|
