INVESTIGATION OF LANTHANIDE BASED MIM DEVICES FOR ADVANCED RF-CMOS AND ReRAM TECHNOLOGY
博士 === 長庚大學 === 電子工程學系 === 101 === Innovations in modern semiconductor technology are critically dependent on the development of denser, faster and less energy consuming devices. Aggressive scaling in complementary metal-oxide-semiconductor (CMOS) devices requires a worthy development of new materia...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29108745458850603171 |