Switching mechanism transition induced by annealing treatment in Pt/ZnO/Cr/ZnO/Pt resistive memory

• Main Authors: Keng Hao Liu, 劉耿豪
• Other Authors: S. L. Kao
• Format: Others
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/09962219134105447200

碩士 === 長庚大學 === 電子工程學系 === 101 === In this study, ZnO thin film embedding a Cr metal layer with Pt electrodes were prepared for nonvolatile resistive memory applications. By modifying the Cr thickness and annealing temperature of the device, the memory cell not only exhibits reversible and steady bistable resistance switching behaviors, but also demonstrates remarkable device parameter improvements including forming-free operation, higher Roff /Ron ratio and a narrow dispersion of the switching voltage. X-ray diffraction and X-ray photoelectron spectroscopy analyses demonstrate that the Cr atoms have lost electrons to become Cr3+ ions after dispersion. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic conduction and Schottky emission, respectively.