Summary: | 碩士 === 國立中正大學 === 電機工程研究所 === 101 === 8-bit microcontroller unit always comes into use in portable bio-application products. In order to extend battery life, reducing power consumption can reach significant result. CMOS integrated circuits with dynamic power consumption is proportional to the square of supply voltage, thus reducing the supply voltage can effectively reduce power consumption. Most of power consumption in microcontroller unit occurs in embedded memory. Under the premise, this paper presents a robust static random access memory with operating voltage 1.1V to improve power consumption. Finally, it fabricated with 0.35um technology process.
The architecture of SRAM inherits original version. Broadly proposing three improved methods: The first is that sizing memory cell to gain better static noise margin, the second is that changing decoder connect type reach faster decode speed and lower power consumption. The third is that adopting latch-type voltage sense amplifier to speed up sensing operation. Post-layout simulation shows that the proposed embedded memory can reaches 10MHz operation in 1.1V and passes all process corners.
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