| Summary: | 碩士 === 國防大學理工學院 === 電子工程碩士班 === 101 === In this thesis, we investigate the impacts of the contact-metal thickness and the annealing temperature on the contact electrodes of infrared detector devices. For infrared detector devices, the contact-metal thickness affects the contact resistance of contact electrodes and the adhesion between the contact metal and the n-GaAs substrate. The thicker coating metal may result in the higher contact resistance to cause higher thermal temperature to interfere with the detection. However, with the thinner coating metal, the contact electrode may not have enough adhesion to maintain the stability of the structure.
On the other hand, the annealing temperature also significantly affects the contact resistance. With higher annealing temperature, the alloy of palladium (Pd), Germanium-Aurum (GeAu) and Aurum (Au) can obtain more energy to achieve the better conductivity for the contact electrodes. Nevertheless, the Arsenic (As) may be melted if the annealing temperature is too high.
We also measure the I-V curve and the uniform of the contact electrodes to analyze the optimal thickness of coating metal and the annealing temperature due to the importance of the Omni contact for infrared detector devices. Experiment results show that the contact electrode can achieve the optimal contact resistance by 13.8 Ω, when the thickness of coating metal Pd is 100 Å and the annealing temperature is 400ºC.
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