Sputtering and selenium method produce CIGS solar cell with characteristics of process parameters verification

• Main Authors: Chia-Chuan Hsu, 許家銓
• Other Authors: 桂清平
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/80801406050775773101

碩士 === 清雲科技大學 === 電子工程所 === 101 === This paper, the main studied CIGS solar cell of precursor and absorber layer by using pulse DC magnetron sputter and thermal evaporation selenization methods manufacture CIGS alloy thin film to process parameter adjustment and film properties planning analysis. QCM corrected real-time detection of CuGa and In material deposition rate with tooling value. In the same time, using OES real-time detected plasma spectral frequency and transform analysis of strength spectrum of cavity of each element. Finally, in process pressure 2×10-3 Torr, Cu、In and Ga element stability, surface resistivity and roughness are preferred. Planning three stack structure SLG/Mo/In/CuGa, SLG/Mo/CuGa/In and SLG/Co-CuInGa in the production of precursor layer that thickness in the 1500 nm. In SLG/Co-CuInGa,it must adjust both CuGa and In deposition rate and thickness at the same time, so adjust both with one power. In power is too high in the adjustment processes that cause melting target, so decreased stability of CuGa power. SLG/Mo/CuGa/In discovered smaller average roughness of the smaller surface resistance, all types of sample surface roughness of less than 20 nm, expressed the good uniformity. SEM surface and cross-section of the crystal structure of Co-CuInGa doesn’t achieve preset thickness. CGI and GGI formula to calculate into the EDS measure the atomic concentration, calculation results and literature match SLG/Mo/In/CuGa and SLG/Co-CuInGa, the conversion efficiency of 18.5~18.9. XRD detection results match with literature on the characteristics of Mo、Cu2In、Cu7In3、Cu9Ga4、Cu11In9、Cu16In9、CuIn2、In. Thermal evaporation selenization precursor layer plan to selenide substrate temperature of 450 with 550 ° C, Se source temperature of 300 ° C. After the seleniding, each sample average roughness of less than 50 nm compared small with the literature,and SEM observation precursor is not good in selenization compound. Cross-section has solid-state diffusion phenomenon, and surface structure grain expansion becomes large phenomenon. The XRD characteristics of CuInSe2、MoSe2、Mo、CuIn3Se5. After RTA annealing, SEM surface grain becomes large, cross-section surface layer has a composite recrystallization to form a buck crystallization