Characteristic Investigation of p-Cu2O/n-Cu2O Homojunction Using Electrochemical Deposition Method
碩士 === 元智大學 === 化學工程與材料科學學系 === 100 === In this study, Cu2O p-n homojunction diodes were fabricated by the consecutive electrochemical deposition of p-Cu2O layer, followed by n-Cu2O layer. Faceted and dendritic crystal growth of Cu2O was produced in alkaline and acid plating bath, respectively. The...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/30838589619599173922 |
| Summary: | 碩士 === 元智大學 === 化學工程與材料科學學系 === 100 === In this study, Cu2O p-n homojunction diodes were fabricated by the consecutive electrochemical deposition of p-Cu2O layer, followed by n-Cu2O layer. Faceted and dendritic crystal growth of Cu2O was produced in alkaline and acid plating bath, respectively. The optical and electrical properties of the Cu2O samples were analyzed using different analytical instruments. Results showed that the Cu2O produced in alkaline and acid plating displayed p-type and n-type semiconductor, respectively, from Mott-Schottky as well as Hall Effect analysis. Additionally, both types of the Cu2O films can absorb the visible light wavelength between 400 nm and 500 nm via the UV-visb. tests. The electronic properties of the fabricated Cu2O films were influenced by the applied voltages and temperatures in the reaction system. The resistance of the Cu2O thin films decreased by thermal annealing in a nitrogen atmosphere. The electronic characteristics of the p-n homojunction diodes were analyzed and affected by the deposition time and the fabrication procedure of the films.
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