Electrical Characteristic and Reliability of Al2O3/HfO2 Stack High-K Gate Dielectric
碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 100 === High-dielectric constant (high-K) material has been used to replace the conventional ultra-thin SiO2 because the latter suffers from large direct tunneling leakage current, which leads to large power consumption. Many kinds of high-K materials can be use...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13842318907211430059 |