| Summary: | 碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 100 === Solar cell is made by Spin-on called Dopants / Rapid Thermal Annealing diffusion technology. Phosphorus atoms into the single-crystal silicon and formation of n+-p junction by the phosphorus solution (P509) spin on wafer and diffusion temperature of 850 to 1000℃ and diffusion time of 30 and 60 seconds. Antireflective coating (ARC) by SOG (spin-on glass) and electrodes are deposition by thermal evaporation.
Finally, cells under AM1.5G, 25℃ condtions. The performances of fabricated single crystal silicon solar cell were measured and analyzed. The best cell without AR-coating, the Open circuit voltage (VOC) of 0.504V, Short circuit current ( Isc) of 8.92mA, Conversion Efficiency (η) of 7.12% are presented. The best cell with AR-coating, the open circuit voltage (VOC) of 0.526V, short circuit current (Isc) of 11.693mA, fill factor(FF) of 53.002, conversion efficiency (η) of 10.195%. Solar cell with ARC improves theη by 43% as compared to that without ARC.
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