| Summary: | 碩士 === 吳鳳科技大學 === 光機電暨材料研究所 === 100 === Terfenol-D, one of rare earth materials, has been intensively studied and widely used in various fields because of its high mechanical strength, structure stability, and low equivalent input impedance. Another magnetostrictive material, Galfenol, has emerged in recent years to replace Terfenol-D. However, the challenge of the development of Galfenol is high-cost fabrication procedures with expensive equipments. In this study, Galfenol was fabricated using low-cost electrochemical deposition. Furthermore, we could find out optimal experimental parameters and relate the parameters to the expected experimental results with the use of Taguchi method.
The results show that gallium ion concentration, deposition time, and temperature were vital process parameters to control the film composition during the electrochemical deposition. Especially, the effect of the GaCl3 concentration could affect the experimental results drastically. After Galfenol film was formed, the crystal structure with A2 phase was examined by X-ray diffraction (XRD) and the magnetization was measured. The film with suitable gallium composition had strong saturated magnetization (Ms) and crystallization.
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