| Summary: | 碩士 === 大同大學 === 光電工程研究所 === 100 === The metal-titanium oxide thin film transistors (TFTs) were fabricated by local anodic oxidation (LAO) technology of atomic force microscopy (AFM).Firstly, we used photolithography technology to make a pattern on the metal thin film area as electrode, used DC Sputter to Sputtering 12 nm thick of Titanium thin film, and manipulated the atomic force microscopy at the room temperature. The oxidation part be channel of back-gated TFTs.
In addition, we deposited 100 nm aluminum thin film with the line width of 500 nm, used photolithography to make a pattern of the area of Source and Drain, again used PVD to sputtering a 12nm thick of Titanium thin film, and used AFM to make a local anodic on the overlapping area of aluminum and titanium thin film, completing the metal-titanium thin film transistors (TFTs). The aluminum part is Gate and the un-oxidized titanium area is Source and Drain.
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