| Summary: | 碩士 === 大同大學 === 光電工程研究所 === 100 === Recently , the resistive random access memory (RRAM) has been extensively investigated . The main structure from the Metal-Insulator- Metal (MIM) stacking, with the low process temperature makes the RRAMs integrated to the conventional IC process practically. In addition, these RRAMs have low power, low current, low cost, properties. Such device has its future in the potential to replace the current flash memory in the non-volatile memory branch.
In this study, we use atomic force microscope (AFM) local anodic oxidation process to fabricate gallium oxide nano-dots for resistive ran- dom access memory. First, gallium (Ga) was heated to 30 ℃ for print in a molten state at indium tin oxide (ITO) conductive glass substrate. at the atmospheric environment under control of AFM, the probe tip and the gallium film forms a water bridge between the probe end. A DC voltage applied, making the dissociation of water bridge by between the probe and gallium the electric field. Part of the oxygen ions will be the chemical reaction under the electric field and the gallium membrane reacted to gal- lium oxide in a nanometer sized dots. It is the main structure of resistive random access memory which the insulator layer was fabricated.
This experiment shows the ability of atomic force microscope local anodic oxidation to produces a diameter of 400 nm gallium oxide nano- dots. Using the current-biased method, the hight-resistance state (HRS) to low-resistance state (LRS) was achieved. The voltage-biased method all- ows devices to reset from LRS to HRS. An individual input of 0.1 V to read the current value to determine the 1 or 0. By such characteristics of resistive memory, we successfully development of novel gallium oxide nano-dot for RRAM with practical manufacturing process.
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