The Reliability of a-Si:H TFTs at Various Temperatures and Gate/Drain Biases
碩士 === 國立臺北科技大學 === 機電整合研究所 === 100 === The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) have been widely studied. For the reliability, it still has space to explore especially in high temperature. For various gate/drain biases, the degradation mechanisms of the TFT are not c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/b9ap95 |