Junction and Capping-Si Integrity of Nano-Strained MOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 100 === Embedded SiGe source/drain technology is an available method to generate the compressive strain in pMOSFETs to increase the hole’s channel mobility. The compressive strain is due to the lattice mismatch between silicon and germanium which makes the silicon in...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qsybad |