Optoelectronic Properties of Nitrogen-Doped Nanocrystalline Diamond Films and Solar Cell Applications

• Main Authors: Chia-Yao Liang, 梁嘉堯
• Other Authors: 林啟瑞
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/85m36s

碩士 === 國立臺北科技大學 === 製造科技研究所 === 100 === Diamond is called the semiconductor material in next generation owing to the outstanding composite physical and chemical features. However, the roughness of CVD-composited MCD films was large due to the surface facet. Additionally, the main problem is that the properties of semiconductor were hard to improve through the doped MCD films. Therefore, the nanocrystalline diamond films (Nanocrystalline diamond films, NCD) was composited by the self-assembly microwave plasma-jet chemical vapor deposition system in this research. The semiconductor properties of NCD film were improved by nitrogen doping. The structure, optical, electrical and basic film properties were discussed with the nitrogen ratio of the plasma. The NCD:N/p-Si solar cell was compounded by NCD:N film and p-type silicon wafer and the properties were discussed. The results of this research showed that the micro structure, roughness, internal structure of the film, N/C ratio, electrical properties, and optical properties were affected by the nitrogen doping. Additionally, the agglomeration of the film was increased with the higher concentration of CN species when the ratio of doped nitrogen was increased. The roughness of the film was Rms:16.5 nm ~ 20.4 nm and the wettability was increased (contact angle 94.4° ~ 64.6°). The optical transmittance was decreased (87% ~ 72%) with the higher nitrogen. The results of Hall measurements showed that the carrier concentration increased 2 order (1016 cm-3 to 1018 cm-3) through nitrogen doping. The solar cell was made by NCD: N compound with p-type silicon. The photoelectric conversion efficiency was 2.8%. The open-circuit voltage was 0.52 V. The short-circuit current was 3 mA and the fill factor was 0.38.