Atomistic Simulation of Arsenic Ion Implantation and Diffusion in Silicon
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 100 === Ion implantation is the key processing step in the production of integrated circuits. However, an unavoidable consequence of energetic ion bombardment is the displacement of lattice atoms, resulting in extensive damage to the silicon crystal structure. Hence und...
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| Format: | Others |
| Language: | en_US |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40036135430483603716 |