Characteristics Investigation of V2O5 Resistance Characteristics Investigation of V2O5 Resistance Random Access Memory Thin Films

碩士 === 南台科技大學 === 電子工程系 === 100 === In this study, the RF magnetron sputtering was used to deposit V2O5 thin films on the ITO/glass substrates, and then the Al electrode was deposited on the V2O5 thin film to form a Metal/Insulator/Metal structure. The effects of different oxygen con...

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Bibliographic Details
Main Authors: Feng-Yi Su, 蘇峯毅
Other Authors: Chien-Min Cheng
Format: Others
Language:zh-TW
Published: 101
Online Access:http://ndltd.ncl.edu.tw/handle/43820895664706457882

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