Characteristics Investigation of V2O5 Resistance Characteristics Investigation of V2O5 Resistance Random Access Memory Thin Films

• Main Authors: Feng-Yi Su, 蘇峯毅
• Other Authors: Chien-Min Cheng
• Format: Others
• Language: zh-TW
• Published: 101
• Online Access: http://ndltd.ncl.edu.tw/handle/43820895664706457882

碩士 === 南台科技大學 === 電子工程系 === 100 === In this study, the RF magnetron sputtering was used to deposit V2O5 thin films on the ITO/glass substrates, and then the Al electrode was deposited on the V2O5 thin film to form a Metal/Insulator/Metal structure. The effects of different oxygen concentrations were investigated and the mechanisms behind resistance switching and leakage current of high resistance state and low resistance state were also discussed. For the physical characteristics, the crystallization, surface roughness, and thickness of V2O5 thin films were obtained by the uses of XRD pattern and SEM. And for the electrical characteristics, using semiconductor parameter analyzer HP4156C, the I-V characteristics of V2O5 thin films was obtained, and the leakage current was investigated too. According to the optimum experimental results, as the Oxygen concentration is 60 %, the operation voltage of V2O5 RRAM is about 2 V and the maximum ON/OFF Ratio is about 1. As the V2O5 RRAM operates 100 times resistance switching cycle continuously, the ON/OFF Ratio will increase up to about 10. Besides, in this study, the conventional thermal annealing process and the rapid thermal annealing process were used to improve the characteristics of V2O5 thin films and the effects were also presented.