Improved Photovoltaic Characteristics of Silicon Nanorods Solar Cells using Thermal Oxidation and Spin-on-Dopants

• Main Authors: Hsuan-Peng Chu, 朱軒芃
• Other Authors: Chin-Lung Cheng
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/ka9dxw

碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 100 === In this thesis, the silicon nanorods (SNRs) on p-Si(100) surface were prepared by the hydrofluoric acid (HF) and silver nitrate (AgNO3) mixture solution at room temperature. The spin-on-dopants (SOD), the thermal oxide, laser firing and the screen printed processes were used to fabricate the SNR solar cells. Silicon nanorods arrays with length of 2-3 um were demonstrated. The p-n junctions were formed by the SOD dopant technique by tuning various diffusion times. Silicon dioxide was grown on the SNR surface at high temperature as the passivation layer. The dangling bounds on the surface of SNR can be reduced by the thermal oxide. In order to connect the emitter and the base, the laser firing was used under various conditions of laser. Finally, screen-printed silver and aluminum paste on the top and rear side, respectively, were achieved under various firing temperatures. Compared to currently industry pyramid and silicon nitride structure, SNRs shows excellent optical antireflection property over a wide spectral bandwidth. Photovoltaic characteristic of the conversion efficiency 8.4 % with a short circuit current density of 25.1 mA/cm2, an open circuit voltage of 560 mV, and a fill factor of 58.3% were achieved.