Improved Characteristics of HfLaTiO-Gated Metal-Oxide-Semiconductor Capacitors using Laser Annealing
碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 100 === Hafnium-related high-k materials with large band offsets, wide bandgaps, and good thermal stability, have been observed to meet the applications of metal-oxide-semiconductor (MOS) devices. Moreover, Hf-based dielectrics with a more higher permittivity migh...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/264hpv |
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