Improved Characteristics of HfLaTiO-Gated Metal-Oxide-Semiconductor Capacitors using Laser Annealing

Improved Characteristics of HfLaTiO-Gated Metal-Oxide-Semiconductor Capacitors using Laser Annealing

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碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 100 === Hafnium-related high-k materials with large band offsets, wide bandgaps, and good thermal stability, have been observed to meet the applications of metal-oxide-semiconductor (MOS) devices. Moreover, Hf-based dielectrics with a more higher permittivity migh...

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Bibliographic Details
Main Authors:	Shih-Chin Lin, 林仕?
Other Authors:	Chin-Lung Cheng
Format:	Others
Language:	zh-TW
Published:	2012
Online Access:	http://ndltd.ncl.edu.tw/handle/264hpv

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