| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所在職專班 === 100 === This study is to prepare a thin film of Cu – Zn - Sn - S ( CZTS ) in Corning Eagle2000 glass substrate.By using magnetron sputtering and sulfidization method,The effects of different process parameters such as substrate temperature and annealing temperature on the characteristics of Cu2ZnSnS4 thin films were explored. Mo electrode film was firstly DC sputtered as an absorbing layer ohmic contact , then the Cu-Zn-Sn layer was prepared using copper , zinc and tin targets and thus the sulfuration process was used to prepared resultant CZTS film. This process could reduce costs and increase the feasibility of the preparation of large area thin film.
From the results of XRD and Raman scattering, the copper-zinc-tin films can convert to the CZTS Kesterite structure. The crystal structure of CuZn and Sn of the sputtered thin film can be obviously improved by elevating substrate temperature, and the crystallinity of the film can also be enhanced.
The optimum processing is to deposit CZT film on an unheated substrate under an Ar flow of 20 sccm, and there after annealing at 550 ℃in vacuum for 35 minutes, The crystal structure the CZTS film can be obtained.
The carrier concentration of the film is 2.37×1019cm-3,carrier mobility is 8.22 cm2V-1s-1,and the energy gap is about 1.5 eV. The surface roughness of CZTS thin film is 3μm.
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