| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 100 === Zinc oxide is a II-VI semiconductor material with direct band-gap of 3.37eV corresponding to the wavelength in the ultraviolet region. ZnO also has large exction binding energy (~60 meV). In addition, ZnO has low resistivity and high transparency in the visible region. As a result, ZnO is considered as a promising material for the application of the optoelectronics. In this study, ZnO film is deposited by sputter on ITO glass substrate,one dimensional type of ZnO nanorods nanostructure are grown by Hydrothermal. One dimensional type of nanostructure is analyed physical properties of ZnO nanorods and ZnO nanorods doped Ni and optical properties by XRD、FE-SEM、UV-VIS、photoluminescence.First, ZnO nanorods are grown respectively on ITO glass and PET substrate, then fabricate naogeneratator by making top electrode. Nanogenerator are driven by ultrasonic waves. ZnO nanorods are grown 9 hours and measured its voltage and current. The average current and average voltage are respectively 2.11×10-6 A and 0.08V. It can obtained well after deflecting by fabricating piezoelectric nanogenerator used ZnO films. Second, ZnO nanorods are grown on ITO glass, then fabricat top electode. We use ultrasonic waves to drive nanogenerator. The average current and average voltage of 0.007 moles are 9.6×10-6A and 0.96V at 3 hours, 6.02×10-5A and 0.06V at 6 hours, 1.05×10-5 A and 0.07V at 9 hours. ZnO nanorods with more Ni doped can obtained better characteristic of voltage – current then undoped.
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