| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 100 === The thesis is divided into two parts, first part we used EPH31 as the host and use green phosphorescence material Ir(ppy3) as guest doptant then were dissolved in chlorobenzene solvent to form the emitter layer of device by spin-coating method. By the adjustment of EML or HTL spin-coating speed、thickness of electronic transport laye (Alq3) and use different electronic inject laye material to compare with the performance of device about luminance and current efficiency. The optimized structure of white organic light-emitting diode and the concentration of material in current efficiency and luminance improvement is the focus of the second part. Through regulation of dopant material concentrations and proportions for the more nearly white CIE coordinates, and then by control of the host material and solvent concentration to get higher performance white OLEDs. The structure of device is:Glass-ITO/PEDOT:PSS/EML/ETL/LiF/AL, hole transport layer PEDOT:PSS are formed film by spin-coating method as the same as EML, PEDOT is itself highly conductive polymer aqueous solutions, it was used to improve the hole injection efficiency of device. Host small-molecular emitting material (CBP) and guest emitting materials (blue: FIrpic, green: Ir(ppy)3, red: Ir(piq)2(acac)) were dissolved in toluene solvent to form a single emission layer of white organic light emitting diode (WOLED), electron transport layer TPBi、hole injection layer LiF, and the cathode AL is deposited by vacuum thermal evaporation, by provious steps to produce a series of single layer three-band white organic light-emitting component.
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