Characterization of the Modified Sputtering Gun Applied on Thin Film Deposition

• Main Authors: Chih-Lu Huang, 黃智祿
• Other Authors: 陳文瑞
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/cr5u46

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 100 === This thesis focuses on the improvement of a home-made sputtering gun used within the sputtering machine. Here the configuration of modified items had divided into three parts. The first is to design a good heat transfer of the waterway within the back copper cathode. It usually causes the magnetic degradation due to the poor design of the cooling waterway. By closing the punch through holes of magnets in copper cathode, and increasing the contact area between the waterways and the copper cathode, the better cooling effect was easily achieved. The second is the design for shielding of the magnetic field. The phenomenon resulted from the poor design of magnetic field and caused cathode outside copper block to be eroded；The third is that the hole-numbers of the copper cathode were increased and resulted in increasing the intensity of magnetic field. The symmetry of the magnetic field as well as the hole-number of the copper cathode was optimized by changing the magnetic lines. Finally, the film qualities of aluminum，silicon，and silicon carbide which deposited on glass substrate were evaluated by using these modified sputtering guns. The deposition rate and film quality were measured and examined for the above mentioned films. The surface topography was observed by using the field-emission scanning electron microscopy. The three dimensional profile was examined by the atomic force microscopy. The film thickness and roughness were measured by a ?-step profile meter， and thus the deposition rate was calculated. From the experiments，it was found that the more closed magnets (i.e. the more magnetic holes) resulted in the larger deposition rate. For the deposition of aluminum film, the sputtering gun with the 16-hole copper cathode has the fast deposition rate. It was about 35.3 nm per minute. However, for the deposition of Si and SiC film，the 15-hole copper cathode has the fast deposition rates which are 21.3 nm/min and 11.4 nm/min for silicon and silicon carbide, respectively.