Synthesis and Study of ZnTe Thin Films by Thermal Evaporation Technique.

• Main Authors: Yu,Yiting, 游易庭
• Other Authors: Hsu,Chenghsing
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/31756389203624877941

碩士 === 國立聯合大學 === LED光電製程產業專班 === 100 === In this study, using thermal evaporation Preparation of ZnO / ZnTe film, ZnTe film (P-type), Zn ratio Te molar ratio of 1:0.6 and 1：0.7, coating temperature of 540℃、560℃ and 580℃ in argon gas flow100、200 sccm one hour holding time. ZnO thin films (N-type), deposition temperature 800℃、900℃,and holding for one hour in the atmosphere. Preparation of the completion of the test piece to the XRD、SEM、EDS analysis of thin-film crystal structure of the film microstructure,Hall effect,four-point probe analysis of thin-film electrical properties. In this study, the coating temperature 800℃ temperature one hour ZnO films held in the atmosphere, and ZnTe film fabrication of heterojunction ZnTe films best conditions for Zn Te molar ratio of 1：0.6, the deposition temperature 580℃ in argon gas flow rate of 100 sccm one hour holding time.The threshold voltage of about 4V,the reverse saturation current of approximately 7μA. Keywords： zinc telluride, zinc oxide, thermal evaporation method