| Summary: | 碩士 === 國立聯合大學 === LED光電製程產業專班 === 100 === In this study, using thermal evaporation Preparation of ZnO / ZnTe film, ZnTe film (P-type), Zn ratio Te molar ratio of 1:0.6 and 1：0.7, coating temperature of 540℃、560℃ and 580℃ in argon gas flow100、200 sccm one hour holding time. ZnO thin films (N-type), deposition temperature 800℃、900℃,and holding for one hour in the atmosphere. Preparation of the completion of the test piece to the XRD、SEM、EDS analysis of thin-film crystal structure of the film microstructure,Hall effect,four-point probe analysis of thin-film electrical properties.
In this study, the coating temperature 800℃ temperature one hour ZnO films held in the atmosphere, and ZnTe film fabrication of heterojunction ZnTe films best conditions for Zn Te molar ratio of 1：0.6, the deposition temperature 580℃ in argon gas flow rate of 100 sccm one hour holding time.The threshold voltage of about 4V,the reverse saturation current of approximately 7μA.
Keywords： zinc telluride, zinc oxide, thermal evaporation method
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