| Summary: | 碩士 === 國立高雄大學 === 化學工程及材料工程學系碩士班 === 100 === Conventional flash memory , utilizing floating gate as charge storage nodes, however, had met the leakage challenges as the devices tend to be scaling down and have high densities. Therefore, the nanocrystal memory was presented.
In this thesis, we use chemical reduction method to synthesize Au and Pt nanoparticles, and use the organic compound “APTMS” to make the nanoparticles being self-assembled on two kinds of oxide layer, SiO2 and HfO2 , respectively. By the way, HfO2 is synthesized by sol-gel method. Finally, it is covered by HfO2 as a control oxide to construct a simple nanocrystal memory. In order to raise electrical properties of memory, we try to change structure of memory. In my study, we use two methods. One is to change different layers of APTMS on original memory structure. The other is to cover different layers of APTMS on original memory structure.
The results obtained from this work showed that variable on layers of APTMS deposited change electrical properties of the memory. Electrical properties become better with the increase in the number of APTMS layers deposited. However, we found electrical properties were not exactly better when it is covered by different layers of APTMS on the original memory structure. In addition, the nanocrystal memory device fabricated with Pt nanoparticles has better electrical properties than Au nanoparticles. The nanocrystal memory device with HfO2 as tunneling oxide has better electrical properties than the one with SiO2 as tunneling oxide. Finally, the electrical properties of nanocrystal memory fabricated by combining with dipping APTMS are not ideal, improving the electrical properties with dipping HfO2 solution.
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