Study of Lateral Power MOSFET with Sub-gate Structure
碩士 === 國立臺灣科技大學 === 電子工程系 === 100 === Power MOSFETs are important discrete devices. They have low conduction power loss, high input impedance, high switching speed, high blocking voltage, and high operating current. The applications of power devices are mainly used in power conversion, rectify, prot...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/f966a6 |