Preparation, property, and device performace of Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 thin films deposited with Cu-Zn-Sn and Cu-ZnS-Sn targets and subsequent selenization

• Main Authors: Jen-pin Hsu, 許仁賓
• Other Authors: Dong-hau Kuo
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/47987753176204672230

碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 100 === Abstract Due to energy crisis, the research of solar cells is much more attractive. One of the main compound solar cells is the Cu(In,Ga)Se2 system but its higher cost has made Cu2ZnSnSe4 (CZTSe) and Cu2ZnSnS4(CZTS) with energy band gaps of 0.9 eV and 1.5 eV, respectively, attractive for thin-film solar cells. In this study, CZTSe and CZTSSe thin film solar cells were prepared on the molybdenum-coated soda lime glass (SLG) substrates. The effects of selenization conditions using Se- and (Se+S)-containing discs and reaction temperature on the performance of sputtered CZT and Cu-ZnS-Sn thin film were evaluated. The CZTSe and CZTSSe solar cell was constituted with the stacking sequence of Ag/ITO/ZnO/CdS/ CZTSe or CZTSSe/Mo/SLG. The quality of the absorption layer was analyzed by X-ray diffractometer and field-emission scanning electron microscope equipped with energy dispersive X-ray spectrometer. The performance of the solar cells was evaluated under the standard AM1.5 illumination. The experimental results showed that the best condition for the CZTSe and CZTSSe thin film was obtained by selenization at 600 oC with a two-step process and with double discs. The CZTSe and CZTSSe films were dense and had the desired composition, good crystallinity, and the grain size of 3-5 μm. The stacked solar cells displayed the power conversion efficiencies of 0.58% and 0.45% for the cells with the CZTSe and CZTSSe absorption layers, respectively.