Research of Current-reused UWB Low Noise Amplifier and Transformer Combined Differential Power Amplifier

• Main Authors: Li-Yin Tseng, 曾瓅潁
• Other Authors: 黃天偉
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/67056262617734145507

碩士 === 國立臺灣大學 === 電信工程學研究所 === 100 === Microwave is suitable over line-of-sight propagation between transmit and receive ends without obstacles and it is a good high-speed transmission technique. If there were any obstacle between the transmission links, the reflection caused by obstacles may weaken the strength of signals, so that microwave has obvious advantages in high frequency which has short return path. Now in our country, there are variety of applications of microwave techniques, such as microwave processing systems in the Hsinchu Science Park, radar systems in military and national defense field, satellites and communication systems in space programs and so on. A power amplifier is one of the important components in microwave system, and plays an irreplaceable role in wireless communication integrated circuits. During the propagation of signals, the strength of signals decrease with the increase of the transmission distance, and that becomes unavoidable limit when we design RF circuits. We must amplify signals before propagating out of the antenna, so designing a high output power and acceptable power added efficiency power amplifier becomes a crucial step in the development of microwave technique. And a low noise amplifier is a key component in the design of RF receiver chain. A low noise amplifier offers enough gain and low noise figure, depressing the effects for noise figure from other components and reducing total noise figure in the whole system which causes signal demodulation more convenient. As the reasons above, the analysis and design of power amplifiers and low noise amplifiers is the main content in this thesis. In this thesis, one power amplifiers, one rectifier, and one low noise amplifier were discussed. The power amplifier was designed at 2.5GHz for 4th generation, and implemented in a standard TSMC 0.18μm CMOS technology. The rectifier was designed at 2.5GHz in order to integrate with the 2.5GHz power amplifier and use these components to apply to wireless transmission experiment. The rectifier was implemented in a standard WIN 0.15μm GaAs pHEMT technology. And the low noise amplifier was designed at 3.3-10.3GHz Ultra Wide Band, and implemented in a standard TSMC 0.18μm CMOS technology.