The effect of adding GaAsSb strain reducing layer on the performance of InAs/GaAs Quantum dot infrared photodetectors
博士 === 國立臺灣大學 === 電子工程學研究所 === 100 === Recently, InAs quantum dots embedded in InGaAs quantum-well structures have attracted much attention. Experimental evidences have demonstrated that QDIPs exhibit improved optical properties by adding an InGaAs strain reducing layer. However, for InGaAs-capped Q...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98665712680488716604 |