Optical Characteristics of Ge1-xSnx alloys and Sn-based Group IV Structure for Resonant Tunneling Diode
碩士 === 國立臺灣大學 === 電子工程學研究所 === 100 === In a recent development, tin (Sn)-based group-IV semiconductor compounds has attracted research attention for new electronic and photonic devices. The incorporation of Sn modulates the bandgap of the host IV-IV compounds, and, above a certain Sn composition, th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72004700496434147099 |