| Summary: | 碩士 === 國立臺灣大學 === 高分子科學與工程學研究所 === 100 === In this study, we fabricated organic/inorganic hybrid that contains zinc oxide (ZnO) nanoparticles synthesized in the presence of a conducting homopolymer and a novel conducting-conducting di-block copolymer as a structure template for the hybrid system. A simple in-situ synthesis of the self-assembly behavior zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) nanohybrid systems and zinc oxide/poly(2,5-dihexyloxy-p-phenylene)-b-poly(3-hexylthiophene) (ZnO/PPP-b-P3HT) nanohybrid systems were investigated. We use the zinc acetate dehydrate (Zn(CH3COO)2．2H2O) as a precursor for ZnO nanoparticles and P3HT as the functional host to chelate zinc ion. The chelated Zn2+ was converted into ZnO by heating in the air at 200oC or by adding tetramethylammonium hydroxide (TMA-OH) as the organic base.
The film samples of ZnO/polymer hybrid were prepared by the following two methods. First, we prepared a Zn2+/polymers solution, and then drop casted the Zn2+/polymers solution directly onto substrates. The coated substrates were then heated at 200oC for 30 minutes for characterization. Second, we prepared the Zn2+/polymers solution, and then added TMA-OH into solution for the ZnO synthesis. Immediately, after that we drop casted the solution onto a substrate. From the study of FTIR spectra of the Zn2+/polymers solution, we confirmed that P3HT is chelated with zinc ion. The UV-Visible spectra measurement also illustrated the effect of ZnO nanoparticles ratio for in the hybrid system. The crystallinity and morphology of ZnO nanoparticles/polymer hybrid films were characterized by GIWAXS and transmission electron microscope (TEM). From GIWAXS spectra, the polymer which dissolved in toluene has good orientation and Zn2+ was converted into ZnO by heating in the air successfully. The TEM images show that P3HT was the chelating zinc ion when the film was heated in the air at 200oC, and it can enhance the co-organization crystalline of the P3HT/ZnO nanoparticles hybrid when put the heated film into annealer under inert atmosphere at 200oC for 1 day.
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