Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics

博士 === 國立臺灣大學 === 材料科學與工程學研究所 === 100 === Intricate connections among the microstructural effect, semiconducting tendency and charge compensation behavior of yttrium (Y3+) dopants in near-stoichiometric barium titanate (BaTiO3; Ba/Ti atomic ratio = 0.999) ceramics sintered at 1460 ◦C in air are exam...

Full description

Bibliographic Details
Main Authors: Chun-Ming Huan, 黃俊銘
Other Authors: Tzong-Lin Jay Shieh
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/39137697387569714824
id ndltd-TW-100NTU05159035
record_format oai_dc
spelling ndltd-TW-100NTU051590352015-10-13T21:50:18Z http://ndltd.ncl.edu.tw/handle/39137697387569714824 Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics 釔離子摻雜對鈦酸鋇之微結構,電性與光解關係之研究 Chun-Ming Huan 黃俊銘 博士 國立臺灣大學 材料科學與工程學研究所 100 Intricate connections among the microstructural effect, semiconducting tendency and charge compensation behavior of yttrium (Y3+) dopants in near-stoichiometric barium titanate (BaTiO3; Ba/Ti atomic ratio = 0.999) ceramics sintered at 1460 ◦C in air are examined. It is found that with increasing Y3+ doping from 0 to 2.0 mol%, the microstructure of BaTiO3 evolves from a liquid-phase-assisted dense-sintered microstructure to a highly porous microstructure characterized by connected pores and loose lattices of fused submicrometre grains. When Y3+ doping is increased progressively from 0.02 to 0.2 mol%, the (negative) majority carrier concentration and conductivity are increased substantially by 4-8 orders of magnitude. This increase in n-type semiconductor characteristics is contributed not only by the increasing substitution of Y3+ for Ba2+ in host BaTiO3, but also by the formation of yttrium-rich and/or oxygen-deficient precipitates at the grain boundaries. The grain boundary phases would therefore stabilize the mechanism of free electron compensation and enable the transportation of electrons through the grain boundaries. Through a combined interpretation of the characterization data, Y3+ doping at 1.0 mol% is found to be the critical doping amount separating different site-occupying behaviors of Y3+ in the BaTiO3 cation sites, which eventually lead to different charge compensation mechanisms and semiconductor properties. As the amount of Y3+ doping is increased from 0 to 0.1 mol%, the Curie temperature for the cubic-to-tetragonal phase transition (Tc) increases due to the reduction in Schottky defects. At the Y3+ doping of 0.2 mol%, Tc starts to decrease due to the formation of low-temperature second phases. Finally, when Y3+ doping is increased to 1.0-2.0 mol%, Tc decreases further due to the increase in oxygen vacancy concentration and the formation of low-temperature second phases. Experimental data from the electron paramagnetic resonance, cathodoluminescsnce and photocatalytic characterizations show that 0.1 mol% Y-doped BaTiO3, which possesses polarons and shallow donor or acceptor energy levels, is suitable for photocatalytic applications under visible light irradiation; while 0.2 mol% Y-doped BaTiO3, which has a higher overall defect concentration, is suitable for photocatalytic applications under UV irradiation. Tzong-Lin Jay Shieh 謝宗霖 2012 學位論文 ; thesis 213 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 博士 === 國立臺灣大學 === 材料科學與工程學研究所 === 100 === Intricate connections among the microstructural effect, semiconducting tendency and charge compensation behavior of yttrium (Y3+) dopants in near-stoichiometric barium titanate (BaTiO3; Ba/Ti atomic ratio = 0.999) ceramics sintered at 1460 ◦C in air are examined. It is found that with increasing Y3+ doping from 0 to 2.0 mol%, the microstructure of BaTiO3 evolves from a liquid-phase-assisted dense-sintered microstructure to a highly porous microstructure characterized by connected pores and loose lattices of fused submicrometre grains. When Y3+ doping is increased progressively from 0.02 to 0.2 mol%, the (negative) majority carrier concentration and conductivity are increased substantially by 4-8 orders of magnitude. This increase in n-type semiconductor characteristics is contributed not only by the increasing substitution of Y3+ for Ba2+ in host BaTiO3, but also by the formation of yttrium-rich and/or oxygen-deficient precipitates at the grain boundaries. The grain boundary phases would therefore stabilize the mechanism of free electron compensation and enable the transportation of electrons through the grain boundaries. Through a combined interpretation of the characterization data, Y3+ doping at 1.0 mol% is found to be the critical doping amount separating different site-occupying behaviors of Y3+ in the BaTiO3 cation sites, which eventually lead to different charge compensation mechanisms and semiconductor properties. As the amount of Y3+ doping is increased from 0 to 0.1 mol%, the Curie temperature for the cubic-to-tetragonal phase transition (Tc) increases due to the reduction in Schottky defects. At the Y3+ doping of 0.2 mol%, Tc starts to decrease due to the formation of low-temperature second phases. Finally, when Y3+ doping is increased to 1.0-2.0 mol%, Tc decreases further due to the increase in oxygen vacancy concentration and the formation of low-temperature second phases. Experimental data from the electron paramagnetic resonance, cathodoluminescsnce and photocatalytic characterizations show that 0.1 mol% Y-doped BaTiO3, which possesses polarons and shallow donor or acceptor energy levels, is suitable for photocatalytic applications under visible light irradiation; while 0.2 mol% Y-doped BaTiO3, which has a higher overall defect concentration, is suitable for photocatalytic applications under UV irradiation.
author2 Tzong-Lin Jay Shieh
author_facet Tzong-Lin Jay Shieh
Chun-Ming Huan
黃俊銘
author Chun-Ming Huan
黃俊銘
spellingShingle Chun-Ming Huan
黃俊銘
Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics
author_sort Chun-Ming Huan
title Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics
title_short Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics
title_full Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics
title_fullStr Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics
title_full_unstemmed Study of Relationships Among Microstructural, Electrical and Photoelectrolytic Properties of Yttrium-Doped Barium Titanate Ceramics
title_sort study of relationships among microstructural, electrical and photoelectrolytic properties of yttrium-doped barium titanate ceramics
publishDate 2012
url http://ndltd.ncl.edu.tw/handle/39137697387569714824
work_keys_str_mv AT chunminghuan studyofrelationshipsamongmicrostructuralelectricalandphotoelectrolyticpropertiesofyttriumdopedbariumtitanateceramics
AT huángjùnmíng studyofrelationshipsamongmicrostructuralelectricalandphotoelectrolyticpropertiesofyttriumdopedbariumtitanateceramics
AT chunminghuan yǐlízicànzáduìtàisuānbèizhīwēijiégòudiànxìngyǔguāngjiěguānxìzhīyánjiū
AT huángjùnmíng yǐlízicànzáduìtàisuānbèizhīwēijiégòudiànxìngyǔguāngjiěguānxìzhīyánjiū
_version_ 1718068717595656192