| Summary: | 碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 100 === The photovoltaic industry has demand of large poly-silicon ingot in order to reduce the cost of manufacturing solar panel and electric power. A directional solidification of 600 kg poly-silicon ingot will be successful only with optimal control of complex processing parameters to achieve the desired temperature and impurities distribution. In order to save the expanse of experiment and materials, simulation is an effective and time saving method to obtain the relationship between varied variables. The major works of this study reveal the correlation between power consumption, size and thermal physical properties of furnace critical parts, which include the thickness, thermal conductivities of graphite susceptors and the bottom plates. Calculated temperature distribution and meniscus interface of solidification will be presented with different conditions of geometries and materials properties. The result of simulation show reasonable correlation with the experimental values of power measurement at different solidified parts of silicon melt. It has also found that the thickness and thermal conductivity of graphite susceptor play most important role for the power consumption of crystal growth.
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